在75°C下不同浓度氢氧化钾泥浆切割晶片的厚度减少和表面反射率随蚀刻时间的变化，氢氧化钾浓度在20-30%左右的蚀刻率大。另外 反射率的初下降是由于微裂纹的开口，这增强了表面的纹理。在75°C下不同浓度氢氧化钾下FAS切割晶片的厚度减少和表面反射率随蚀刻 时间的关系，FAS切割晶片的蚀刻速率显示出与浆液切割晶片相同的行为，由于表面上不存在微裂纹，因此表面反射率的初始降低并不那么 明显。

At 75 ° C, the thickness of chips cut by potassium hydroxide slurry with different concentrations decreases and the surface reflectivity changes with etching time. The etching rate is large when the potassium hydroxide concentration is about 20-30%. In addition, the initial decrease of reflectivity is due to the opening of microcracks, which enhances the surface texture. At 75 ° C, under different concentrations of potassium hydroxide, the thickness of FAS cut wafers decreases and the relationship between surface reflectivity and etching time. The etching rate of FAS cut wafers shows the same behavior as that of slurry cut wafers. Since there are no microcracks on the surface, the initial reduction of surface reflectivity is not so obvious.

通过比较浆料切割晶片和FAS切割晶片的厚度减少情况，FAS切割晶片在初始时间为5-10分钟内的蚀刻率较低，这在另外中得到了阐明 ，其中绘制了当氢氧化钾浓度分别为30%和47%时，浆液和FAS切割晶片的厚度减少，对于超过大约10分钟的蚀刻时间，这两种类型的晶片的 蚀刻速率是相同的。

By comparing the thickness reduction of slurry cut wafers and FAS cut wafers, the etching rate of FAS cut wafers is low within the initial time of 5-10 minutes, which is illustrated in another article. It is drawn that when the potassium hydroxide concentration is 30% and 47% respectively, the thickness of slurry and FAS cut wafers decreases. For the etching time exceeding about 10 minutes, the etching rate of these two types of wafers is the same.

在浆液切面的横截面上显示了一层非晶Si(a-Si)，典型厚度为20-40纳米，在非晶态层的下面，可以观察到一个300-600纳米厚的缺陷 区域；大多数缺陷位于表面800纳米的层中，但也有一些位于2000纳米的深度。通过比较切割浆料和切割FAS晶片的表面结构截面，FAS切割 晶片的非晶层和缺陷层平均厚2-3倍，根据在蚀刻过程中初始阶段测量的蚀刻速率，TEM观察到的非晶硅层在前2-5秒内被蚀刻掉，因此不是 在初始阶段蚀刻速率降低的原因。

A layer of amorphous Si (a-Si) is shown on the cross section of the slurry section, with a typical thickness of 20-40 nm. Under the amorphous layer, a defect area with a thickness of 300-600 nm can be observed; Most defects are located in a layer of 800 nm on the surface, but some are located at a depth of 2000 nm. By comparing the surface structure section of the cutting paste and the cutting FAS chip, the average thickness of the amorphous layer and defect layer of the FAS cutting chip is 2-3 times. According to the etching rate measured at the initial stage of the etching process, the amorphous silicon layer observed by TEM is etched in the first 2-5 seconds, so it is not the reason for the decrease of the etching rate at the initial stage.

在进行预清洗过程时，蚀刻速率变化不大，说明表面没有氧化硅掩蔽层或有机残留物层，透射电镜调查也证实了这一发现。后通过FAS 和标准浆料晶片的碱性溶液中的蚀刻速率随时间、温度和不同的预清洗过程的变化。

During the pre cleaning process, the etching rate did not change much, indicating that there was no silicon oxide mask layer or organic residue layer on the surface. The TEM investigation also confirmed this discovery. The etching rate in alkaline solution passing through FAS and standard slurry chips varies with time, temperature and different pre cleaning processes.

结果显示，氢氧化钾浓度的大蚀刻率在20-30wt%左右，在初始5-10分钟的蚀刻过程中，FAS晶片的蚀刻率低于浆状晶片，这取决于氢氧 化钾的浓度和温度。更多关于氢氧化钾产品的事项您可以来我们网站http://www.jinhao360.com进行咨询了解！

The results show that the large etching rate of potassium hydroxide concentration is about 20-30wt%. During the initial 5-10 minute etching process, the etching rate of FAS chip is lower than that of slurry chip, which depends on the concentration and temperature of potassium hydroxide. For more information about potassium hydroxide products, you can visit our website http://www.jinhao360.com Ask about it!